知识与财富的链接
在基于漂移扩散模型的半导体器件仿真模拟中,采用Zlamal有限元方法进行数值离散,结合提出的电离损伤耦合模型,对横向PNP (LPNP)双极晶体管(BJT,bipolar junction transistors)的电离损伤效应进行模拟。基于三维并行自适应有限元软件平台PHG (Parallel Hierarchical Grid)实现了模型和算法,并通过数值计算的方式成功模拟出了LPNP受电离辐射影响后出现的基极电流增大及电流增益退化的现象。进行了网格规模达1亿单元、并行规模达1 024进程的大规模数值实验,展示了算法良好的并行可扩展性。
The Zlamal finite element discretization is applied in the drift-diffusion model for the simulations of semiconductor devices.Combined with the coupled ionization damage model,the ionization damage effects of lateral PNP (LPNP) bipolar junction transistors (BJT) are simulated.The model and algorithm are implemented based on the three-dimensional parallel adaptive finite element toolbox PHG (Parallel Hierarchical Grid).The phenomena of excess base current and current gain degradation in LPNP BJTs are successfully simulated via numerical calculation. A large-scale numerical experiment with 100 million elements and 1 024 MPI processes is carried out,demonstrating the good parallel scalability of the algorithm.
