In semiconductor packaging, AMB (active metal brazing) ceramic substrates play a key role in high-speed rail, wind energy, photovoltaics, electric vehicles and other fields due to their high thermal conductivity and reliability, so active metal brazing occupies an important position in dissimilar material joining methods. The key to active brazing is the selection of active brazing, and the influence of different components of active brazing metal on the wettability of different ceramic surfaces varies greatly. In this paper, three mainstream wettability theories are introduced, and on this basis, the changes in wettability of three types of ceramic systems containing Ti are summarized from the perspectives of Ti content, brazing temperature and holding time, and the reasons for the change of wettability are analyzed, which provides new ideas for improving the interfacial bonding of dissimilar material connections.