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压接型IGBT均流设计

压接型IGBT均流设计

ISSN:1004-9649
2019年第52卷第9期
电力电子器件可靠性专栏
刘国友1,2, 窦泽春1,3, 罗海辉1,2, 覃荣震1,2, 王彦刚1,2 LIU Guoyou1,2, DOU Zechun1,3, LUO Haihui1,2, QIN Rongzhen1,2, WANG Yangang1,2
1. 新型功率半导体器件国家重点实验室, 湖南 株洲 412001;2. 株洲中车时代电气股份有限公司, 湖南 株洲 412001;3. 中车株洲电力机车研究所有限公司, 湖南 株洲 412001 1. State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou 412001, China;2. Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou 412001, China;3. CRRC Zhuzhou Institute Co., Ltd., Zhuzhou 412001, China

针对压接型绝缘栅双极晶体管(IGBT)内部均流设计,对多芯片压接结构及其压力均衡、压接型IGBT芯片内部均流、子单元间均流等方面进行了研究和优化设计。试验验证了压接型IGBT具有良好的电流关断能力、短路电流能力及反偏安全工作区,器件内部均流状态较好。

Aiming at the inner design of the press-pack IGBT devices, this paper focuses on the study and optimal design of these issues, such as multi-chip pressure contact and its pressure balancing, internal current-sharing and current balancing among sub-units. Testing results showed that the developed press-pack IGBT devices has promising capabilities of current turn-off, short-circuit current and RBSOA, which indicates their good ability of inner current sharing.

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ISSN:1004-9649
2019年第52卷第9期
电力电子器件可靠性专栏

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