知识与财富的链接
用射频(RF)溅射法在镀LaNiO3(LNO)底电极的Si片上沉积PbZr0.52 Ti0.48 O3(PZT)铁电薄膜,沉积过程中基底温度为370℃,然后在大气环境中对沉积的PZT薄膜样品进行快速热退火处理(650℃,5min)．用电感耦合等离子体发射光谱(ICP-AES)测量其组分,X射线衍射(XRD)分析PZT薄膜的结晶结构和取向,扫描电子显微镜(SEM)分析薄膜的表面形貌和微结果,RT66A标准铁电综合测试系统分析Pt／PZT／LNO电容器的铁电与介电特性,结果表明,PZT薄膜的组分、结构和性能都与溅射沉积功率有关．
PbZr0.52Ti0.48O3(PZT) ferroelectric thin films were deposited on LaNiO3 coated p-Si(111) substrates by RF magnetron sputtering at low substrate temperature( T =370℃) with deposition power ranging from 60W to 120W, sequentially followed by a rapid thermal annealing(RTA) process at temperature 650℃ for 5 minutes. The crystalline phase, microstructure, composition, and electrical properties of PZT thin films were investigated by X-ray diffraction(XRD), canning electron microscope(SEM), inductively coupled plasma-atom emission spectrometry (ICP-AES), four-probe meter and spectro-ellipsometer, respectively. It is found that the microstructure, composition and electrical properties of sputtered PZT thin films are highly dependent on the deposition power, i.e., the atom rate Pb(Zr+Ti) of PZT films and the leak-current of Pt/PZT/LNO capacitors increase as the deposition power increases, films deposited at low power are Pb-poor and present nonferroelectricity, while those deposited at high power are Pb-rich.Optimized deposition power is 80W.
