阻变存储器具有存储单元结构简单、工作速度快、功耗低、有利于提高集成密度等诸多优点,受到广泛的关注。作者论述了 RRAM 的基本结构和工作原理, 并介绍了三维集成和多值存储等 RRAM 新型技术。
Resistive random access memory(RRAM) is extensively concerned because of its excellent characteristics,namely,simple cell structure,high speed,low power and high density.The basic structure and operation principle of RRAM are presented.The promising RRAM technologies,such as 3D integration and multi-level storage,are discussed.