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Electrical and γ-ray energy spectrum response properties of PbI2 crystal grown by physical vapor transport

Electrical and γ-ray energy spectrum response properties of PbI2 crystal grown by physical vapor transport

ISSN:0253-4177
2012年第5期

Lead iodide single crystal was grown by physical vapor transport method.Two radiation detectors with different configurations were fabricated from the as-grown crystal.The electrical and y-ray response properties at room temperature of the both detectors were investigated.It is found that the dark resistivity of the detectors are respectively 3×1010Ω·cm for bias electric field parallel to crystal c-axis(E//c) and 2×108Ω·cm for perpendicular to crystal c-axis(E⊥c).The energy spectrum response measurement shows that both detectors were sensitive to 241 Am 59.5 keVγ-rays,and achieved a good energy resolution of 16.8%for the E⊥c-axis configuration detector with a full width at half maximum of 9.996 keV.

Lead iodide single crystal was grown by physical vapor transport method.Two radiation detectors with different configurations were fabricated from the as-grown crystal.The electrical and y-ray response properties at room temperature of the both detectors were investigated.It is found that the dark resistivity of the detectors are respectively 3×1010Ω·cm for bias electric field parallel to crystal c-axis(E//c) and 2×108Ω·cm for perpendicular to crystal c-axis(E⊥c).The energy spectrum response measurement shows that both detectors were sensitive to 241 Am 59.5 keVγ-rays,and achieved a good energy resolution of 16.8%for the E⊥c-axis configuration detector with a full width at half maximum of 9.996 keV.

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ISSN:0253-4177
2012年第5期

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