知识与财富的链接
利用射频磁控溅射技术在玻璃衬底上成功制备了In掺杂的ZnO(ZnO∶In)薄膜。X射线衍射（XRD）和原子力显微镜（AFM）的研究结果显示所制备的ZnO∶In为纤锌矿的多晶薄膜,具有高度C轴择优取向。气敏研究结果表明ZnO∶In薄膜对NO2气体有较强的敏感性,最佳工作温度为273 ℃,其敏感度与薄膜的厚度和NO2气体的体积分数有关。ZnO∶In薄膜对较高体积分数的NO2气体的灵敏度较高,而薄膜比厚膜的灵敏度高,厚度为90 nm的薄膜在273 ℃时对体积分数为2×10-5的NO2气体的敏感度高
In doped ZnO thin films were prepared on glass substrate by RF magnetron sputtering. The result of XRD and AFM shows that the films are polycrystalline with high c axis orientation. The study of gas sensing reveals that the films are sensitive to NO2 and the best sensibility occurs at 273 ℃; the sensibility is concerned with the concentration of NO2 and the film thickness. The ZnO∶In films are more sensitive to the NO2 gas with higher concentration of NO2 and thinner films have a better sensitivity. Exposed to 2×10-5 NO2 at 273 ℃, the 90nm thick film has a sensibility of 16, indicating that ZnO∶In films can be used to measure NO2 with a low concentration.