知识与财富的链接
用二维模拟软件 ISE研究了典型的 70 nm高 K介质 MOSFETs的短沟性能 .结果表明 ,由于 FIBL 效应 ,随着栅介质介电常数的增大 ,阈值电区减小 ,而漏电流和亚阈值摆幅增大 ,导致器件短沟性能退化 .这种退化可以通过改变侧墙材料来抑制
The short-channel performance of typical 70nm MOSFETs with high K gate dielectric is widely studied by using a two dimensional(2-D) device simulator.The short-channel performance is degraded from the fringing field and lower the source/drain junction resistance.The sidewall material is found very useful to eliminate the fringing-induced berrier lowing effect.
